![]() ![]() Successful operation of the gate driver circuit in a harsh environment, especially with minimal or no heat sink and without liquid cooling, can increase the power-to-volume ratio as well as more » the power-to-weight ratio for power conversion modules such as a DC-DC converter, inverter etc. The placement of the gate driver circuit next to the power switch is optimal for minimizing system complexity. Like any other power switches, SiC-based power devices also need gate driver circuits to interface them with the logic units. Silicon carbide (SiC)-based field effect transistors (FETs) are gaining popularity as switching elements in power electronic circuits designed for high-temperature environments like hybrid electric vehicle, aircraft, well logging, geothermal power generation etc. = W for operating temperature up to 200 C.
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